1.55-$\mu$m Range InAs–InP (100) Quantum-Dot Fabry–Pérot and Ring Lasers Using Narrow Deeply Etched Ridge Waveguides
نویسندگان
چکیده
منابع مشابه
Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
Ten-layer InAs/In0.15Ga0.85As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 lm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 · 2,000 lm) delivered total output power of up to 272.6 mW at 10 C at 1.3 lm. Under p...
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ژورنال
عنوان ژورنال: IEEE Photonics Technology Letters
سال: 2006
ISSN: 1041-1135
DOI: 10.1109/lpt.2006.887382